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- Manufacturer No：SI7884BDP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7884BDP-T1-GE3
- SKU：245294
- Description：Trans MOSFET N-CH 40V 18.5A 8-Pin PowerPAK SO T/R
User Guide
User Guide
SI7884BDP-T1-GE3 Details
Trans MOSFET N-CH 40V 18.5A 8-Pin PowerPAK SO T/R
SI7884BDP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Published: 2015
- Threshold Voltage: 3V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Length: 4.9mm
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Turn On Delay Time: 30 ns
- Fall Time (Typ): 11 ns
- Series: TrenchFET?
- Height: 1.04mm
- Resistance: 7.5mOhm
- Continuous Drain Current (ID): 58A
- JESD-30 Code: R-XDSO-C5
- Current - Continuous Drain (Id) @ 25°C: 58A Tc
- Avalanche Energy Rating (Eas): 54 mJ
- Power Dissipation-Max: 4.6W Ta 46W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Pin Count: 8
- REACH SVHC: No SVHC
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 40V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 50A
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Rise Time: 14 ns
- Turn-Off Delay Time: 38 ns
- Package / Case: PowerPAK? SO-8
- Weight: 506.605978mg
- Width: 5.89mm
- Power Dissipation: 4.6W
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
- Rds On (Max) @ Id, Vgs: 7.5m Ω @ 16A, 10V
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