SI7718DN-T1-GE3Vishay Siliconix
    Add to like
    Add to project list
    SI7718DN-T1-GE3123
    • Manufacturer No：
      SI7718DN-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      269599
    • Description：
      MOSFET N-CH 30V 35A 1212-8
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    SI7718DN-T1-GE3
    • Manufacturer No：
      SI7718DN-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI7718DN-T1-GE3
    • SKU：
      269599
    • Description：
      MOSFET N-CH 30V 35A 1212-8

    User Guide

    User Guide

    SI7718DN-T1-GE3 Details

    MOSFET N-CH 30V 35A 1212-8

    SI7718DN-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Number of Terminations: 5
    • Published: 2015
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Continuous Drain Current (ID): 35A
    • Width: 3.05mm
    • Fall Time (Typ): 12 ns
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Series: TrenchFET?
    • Subcategory: FET General Purpose Powers
    • Rise Time: 13ns
    • Package / Case: PowerPAK? 1212-8
    • Current - Continuous Drain (Id) @ 25°C: 35A Tc
    • JESD-30 Code: S-XDSO-C5
    • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Pin Count: 8
    • Peak Reflow Temperature (Cel): 260
    • Threshold Voltage: 2.5V
    • Terminal Finish: Matte Tin (Sn)
    • REACH SVHC: Unknown
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Terminal Form: C BEND
    • Case Connection: DRAIN
    • Length: 3.05mm
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Pulsed Drain Current-Max (IDM): 70A
    • Turn On Delay Time: 22 ns
    • Turn-Off Delay Time: 26 ns
    • Height: 1.04mm
    • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
    • Drain-source On Resistance-Max: 0.006Ohm
    • Avalanche Energy Rating (Eas): 20 mJ
    • Power Dissipation-Max: 3.7W Ta 52W Tc
    • Rds On (Max) @ Id, Vgs: 6m Ω @ 10A, 10V
    Search for similar products

    SI7718DN-T1-GE3 Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & SI7718DN-T1-GE3

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via