SI7958DP-T1-E3Vishay Siliconix
    Add to like
    Add to project list
    SI7958DP-T1-E3123
    • Manufacturer No：
      SI7958DP-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      Get the PDF file
    • SKU：
      244281
    • Description：
      MOSFET 2N-CH 40V 7.2A PPAK SO-8
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    SI7958DP-T1-E3
    • Manufacturer No：
      SI7958DP-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI7958DP-T1-E3
    • SKU：
      244281
    • Description：
      MOSFET 2N-CH 40V 7.2A PPAK SO-8

    User Guide

    User Guide

    SI7958DP-T1-E3 Details

    MOSFET 2N-CH 40V 7.2A PPAK SO-8

    SI7958DP-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Pin Count: 8
    • Peak Reflow Temperature (Cel): 260
    • Published: 2011
    • Threshold Voltage: 3V
    • REACH SVHC: Unknown
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Transistor Application: SWITCHING
    • Pulsed Drain Current-Max (IDM): 40A
    • Case Connection: DRAIN
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Power Dissipation: 1.4W
    • FET Feature: Logic Level Gate
    • FET Type: 2 N-Channel (Dual)
    • Fall Time (Typ): 17 ns
    • Nominal Vgs: 3 V
    • Height: 1.04mm
    • Weight: 506.605978mg
    • Turn-Off Delay Time: 66 ns
    • Package / Case: PowerPAK? SO-8 Dual
    • Resistance: 16.5mOhm
    • Rds On (Max) @ Id, Vgs: 16.5m Ω @ 11.3A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Number of Terminations: 6
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 40
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 40V
    • Length: 4.9mm
    • Operating Mode: ENHANCEMENT MODE
    • Terminal Form: C BEND
    • Subcategory: FET General Purpose Power
    • Max Power Dissipation: 1.4W
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Series: TrenchFET?
    • Turn On Delay Time: 17 ns
    • Rise Time: 17 ns
    • Current - Continuous Drain (Id) @ 25°C: 7.2A
    • Continuous Drain Current (ID): 11.3A
    • Width: 5.89mm
    • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
    • Avalanche Energy Rating (Eas): 61 mJ
    • JESD-30 Code: R-XDSO-C6
    • Base Part Number: SI7958
    Search for similar products

    SI7958DP-T1-E3 Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & SI7958DP-T1-E3

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via