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- Manufacturer No：SI8413DB-T1-E1
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI8413DB-T1-E1
- SKU：267419
- Description：MOSFET 20V 6.5A 2.77W 48mohm @ 4.5V
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User Guide
SI8413DB-T1-E1 Details
MOSFET 20V 6.5A 2.77W 48mohm @ 4.5V
SI8413DB-T1-E1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Pins: 4
- Pin Count: 4
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Width: 1.6mm
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 20V
- Operating Temperature: -55°C~150°C TJ
- Factory Lead Time: 33 Weeks
- Transistor Application: SWITCHING
- Subcategory: Other Transistors
- Fall Time (Typ): 50 ns
- FET Type: P-Channel
- Vgs (Max): ±12V
- Turn On Delay Time: 31 ns
- Vgs(th) (Max) @ Id: 1.4V @ 250μA
- Height: 360μm
- Drain-source On Resistance-Max: 0.063Ohm
- Current - Continuous Drain (Id) @ 25°C: 4.8A Ta
- Continuous Drain Current (ID): -6.5A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Terminations: 4
- Published: 2013
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Length: 1.6mm
- Drain to Source Voltage (Vdss): 20V
- Terminal Position: BOTTOM
- Terminal Form: BALL
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Rise Time: 50 ns
- Series: TrenchFET?
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Turn-Off Delay Time: 105 ns
- Power Dissipation: 1.47W
- Package / Case: 4-XFBGA, CSPBGA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
- Power Dissipation-Max: 1.47W Ta
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