SI8805EDB-T2-E1Vishay Siliconix
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    • Manufacturer No：
      SI8805EDB-T2-E1
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      243899
    • Description：
      MOSFET 8V P-CH Micro Foot
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    SI8805EDB-T2-E1
    • Manufacturer No：
      SI8805EDB-T2-E1
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI8805EDB-T2-E1
    • SKU：
      243899
    • Description：
      MOSFET 8V P-CH Micro Foot

    User Guide

    User Guide

    SI8805EDB-T2-E1 Details

    MOSFET 8V P-CH Micro Foot

    SI8805EDB-T2-E1 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Pins: 4
    • Pin Count: 4
    • Power Dissipation: 500mW
    • Element Configuration: Single
    • Terminal Position: BOTTOM
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • DS Breakdown Voltage-Min: 8V
    • Turn-Off Delay Time: 25 ns
    • Turn On Delay Time: 13 ns
    • Series: TrenchFET?
    • Rise Time: 13ns
    • Vgs(th) (Max) @ Id: 700mV @ 250μA
    • Drive Voltage (Max Rds On,Min Rds On): 1.2V 4.5V
    • Drain-source On Resistance-Max: 0.088Ohm
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Gate to Source Voltage (Vgs): 5V
    • Number of Terminations: 4
    • Terminal Finish: Matte Tin (Sn)
    • Transistor Element Material: SILICON
    • Factory Lead Time: 15 Weeks
    • Published: 2017
    • Terminal Form: BALL
    • Transistor Application: SWITCHING
    • Drain to Source Voltage (Vdss): 8V
    • Subcategory: Other Transistors
    • FET Type: P-Channel
    • Vgs (Max): ±5V
    • Fall Time (Typ): 17 ns
    • Power Dissipation-Max: 500mW Ta
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
    • Package / Case: 4-XFBGA
    • Continuous Drain Current (ID): -3.1A
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