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- Manufacturer No：SI8817DB-T2-E1
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI8817DB-T2-E1
- SKU：250173
- Description：MOSFET P-CH 20V MICROFOOT
User Guide
User Guide
SI8817DB-T2-E1 Details
MOSFET P-CH 20V MICROFOOT
SI8817DB-T2-E1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 4
- Terminal Finish: Matte Tin (Sn)
- Element Configuration: Single
- Terminal Position: BOTTOM
- Terminal Form: BALL
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Packaging: Digi-Reel?
- Drain to Source Breakdown Voltage: -20V
- Continuous Drain Current (ID): 2.9A
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 1.5V 4.5V
- Package / Case: 4-XFBGA
- Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 4
- Published: 2013
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- FET Type: P-Channel
- Power Dissipation: 900mW
- Factory Lead Time: 44 Weeks
- Series: TrenchFET?
- Vgs (Max): ±8V
- Power Dissipation-Max: 500mW Ta
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V
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