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- Manufacturer No：SIB912DK-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SIB912DK-T1-GE3
- SKU：318839
- Description：Dual N-Channel 20 V 216 mO 2 nC TrenchFET® Mosfet - PowerPAK® SC-75-6L Dual
User Guide
User Guide
SIB912DK-T1-GE3 Details
Dual N-Channel 20 V 216 mO 2 nC TrenchFET® Mosfet - PowerPAK® SC-75-6L Dual
SIB912DK-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Terminations: 6
- Pin Count: 6
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Length: 1.6mm
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Continuous Drain Current (ID): 1.5A
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Fall Time (Typ): 10 ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Height: 750μm
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Max Power Dissipation: 3.1W
- Package / Case: PowerPAK? SC-75-6L Dual
- RoHS Status: ROHS3 Compliant
- Number of Channels: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Published: 2013
- Number of Pins: 6
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- Width: 1.6mm
- REACH SVHC: Unknown
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Subcategory: FET General Purpose Power
- Rise Time: 10 ns
- Threshold Voltage: 400mV
- Turn On Delay Time: 5 ns
- Series: TrenchFET?
- Power Dissipation: 1.1W
- Turn-Off Delay Time: 24 ns
- Weight: 95.991485mg
- Rds On (Max) @ Id, Vgs: 216m Ω @ 1.8A, 4.5V
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