SIB914DK-T1-GE3Vishay Siliconix
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    SIB914DK-T1-GE3123
    • Manufacturer No：
      SIB914DK-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      Get the PDF file
    • SKU：
      319343
    • Description：
      MOSFET 2N-CH 8V 1.5A PPAK SC75-6
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    SIB914DK-T1-GE3
    • Manufacturer No：
      SIB914DK-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SIB914DK-T1-GE3
    • SKU：
      319343
    • Description：
      MOSFET 2N-CH 8V 1.5A PPAK SC75-6

    User Guide

    User Guide

    SIB914DK-T1-GE3 Details

    MOSFET 2N-CH 8V 1.5A PPAK SC75-6

    SIB914DK-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Part Status: Obsolete
    • Number of Terminations: 6
    • Pin Count: 6
    • Peak Reflow Temperature (Cel): 260
    • Element Configuration: Dual
    • Length: 1.6mm
    • Transistor Element Material: SILICON
    • Operating Temperature: -55°C~150°C TJ
    • Transistor Application: SWITCHING
    • Drain to Source Voltage (Vdss): 8V
    • Terminal Form: C BEND
    • Subcategory: FET General Purpose Power
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Height: 750μm
    • Fall Time (Typ): 7 ns
    • Series: TrenchFET?
    • Power Dissipation: 1.1W
    • Weight: 95.991485mg
    • Resistance: 113mOhm
    • Package / Case: PowerPAK? SC-75-6L Dual
    • Rds On (Max) @ Id, Vgs: 113m Ω @ 2.5A, 4.5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Gate to Source Voltage (Vgs): 5V
    • Number of Pins: 6
    • Published: 2012
    • Time@Peak Reflow Temperature-Max (s): 40
    • Width: 1.6mm
    • REACH SVHC: Unknown
    • FET Feature: Standard
    • Continuous Drain Current (ID): 1.5A
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Breakdown Voltage: 8V
    • Case Connection: DRAIN
    • Threshold Voltage: 800mV
    • Rise Time: 7ns
    • Turn On Delay Time: 4 ns
    • Turn-Off Delay Time: 22 ns
    • FET Type: 2 N-Channel (Dual)
    • Max Power Dissipation: 3.1W
    • Nominal Vgs: 800 mV
    • Vgs(th) (Max) @ Id: 800mV @ 250μA
    • Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V
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