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SIF902EDZ-T1-E3123
  • Manufacturer No:
    SIF902EDZ-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    371738
  • Description:
    MOSFET 20V 10.3A 3.5W 2.5mohm @ 4.5V
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SIF902EDZ-T1-E3
  • Manufacturer No:
    SIF902EDZ-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SIF902EDZ-T1-E3
  • SKU:
    371738
  • Description:
    MOSFET 20V 10.3A 3.5W 2.5mohm @ 4.5V

SIF902EDZ-T1-E3 Details

MOSFET 20V 10.3A 3.5W 2.5mohm @ 4.5V

SIF902EDZ-T1-E3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Terminations: 6
  • Pin Count: 6
  • Gate to Source Voltage (Vgs): 12V
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 20V
  • Terminal Finish: MATTE TIN
  • Drain Current-Max (Abs) (ID): 7A
  • Operating Mode: ENHANCEMENT MODE
  • Factory Lead Time: 111 Weeks
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • FET Feature: Logic Level Gate
  • Turn-Off Delay Time: 1 μs
  • FET Type: 2 N-Channel (Dual) Common Drain
  • Fall Time (Typ): 2.3 μs
  • Turn On Delay Time: 1.7 μs
  • Package / Case: PowerPAK? 2x5
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Pins: 6
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2009
  • Drain to Source Voltage (Vdss): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Terminal Form: FLAT
  • Continuous Drain Current (ID): 7A
  • Pulsed Drain Current-Max (IDM): 40A
  • Subcategory: FET General Purpose Power
  • Max Power Dissipation: 1.6W
  • Series: TrenchFET?
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Rise Time: 2.3μs
  • Rds On (Max) @ Id, Vgs: 22m Ω @ 7A, 4.5V

Excellent

Based on reviews

Excellent

Based on reviews

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