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- Manufacturer No：SIHA15N50E-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIHA15N50E-E3
- SKU：398295
- Description：VISHAY SIHA15N50E-E3. MOSFET, N-CH, 500V, 14.5A, TO-220FP-3
User Guide
User Guide
SIHA15N50E-E3 Details
VISHAY SIHA15N50E-E3. MOSFET, N-CH, 500V, 14.5A, TO-220FP-3
SIHA15N50E-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 500V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- JEDEC-95 Code: TO-220AB
- Vgs (Max): ±30V
- Pulsed Drain Current-Max (IDM): 28A
- Weight: 6.000006g
- Power Dissipation-Max: 33W Tc
- Current - Continuous Drain (Id) @ 25°C: 14.5A Tc
- Rds On (Max) @ Id, Vgs: 280m Ω @ 7.5A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Published: 2009
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- DS Breakdown Voltage-Min: 500V
- Case Connection: ISOLATED
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Configuration: SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-220-3 Full Pack
- Continuous Drain Current (ID): 14.5A
- Resistance: 243mOhm
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1162pF @ 100V
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