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- Manufacturer No：SIHA15N60E-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIHA15N60E-E3
- SKU：400215
- Description：VISHAY SIHA15N60E-E3 MOSFET, N CHANNEL, 600V, 15A, TO-220F
User Guide
User Guide
SIHA15N60E-E3 Details
VISHAY SIHA15N60E-E3 MOSFET, N CHANNEL, 600V, 15A, TO-220F
SIHA15N60E-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Published: 2014
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-220-3 Full Pack
- Fall Time (Typ): 33 ns
- Current - Continuous Drain (Id) @ 25°C: 15A Tc
- Power Dissipation-Max: 34W Tc
- Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 600V
- Continuous Drain Current (ID): 15A
- Case Connection: ISOLATED
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Drain to Source Breakdown Voltage: 650V
- Turn-Off Delay Time: 35 ns
- Vgs (Max): ±30V
- Turn On Delay Time: 17 ns
- Weight: 6.000006g
- Drain-source On Resistance-Max: 0.28Ohm
- Rise Time: 51ns
- Rds On (Max) @ Id, Vgs: 280m Ω @ 8A, 10V
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