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- Manufacturer No：SIHB15N60E-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIHB15N60E-GE3
- SKU：389830
- Description：MOSFET N-CH 600V 15A DPAK
User Guide
User Guide
SIHB15N60E-GE3 Details
MOSFET N-CH 600V 15A DPAK
SIHB15N60E-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Bulk
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Number of Pins: 3
- Factory Lead Time: 14 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Continuous Drain Current (ID): 15A
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- JESD-30 Code: R-PSSO-G2
- Turn-Off Delay Time: 35 ns
- Vgs (Max): ±30V
- Width: 9.65mm
- Turn On Delay Time: 17 ns
- Subcategory: FET General Purpose Powers
- Weight: 1.437803g
- Fall Time (Typ): 66 ns
- Power Dissipation-Max: 180W Tc
- Rds On (Max) @ Id, Vgs: 280m Ω @ 8A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Pin Count: 4
- Terminal Form: GULL WING
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- Threshold Voltage: 2V
- Published: 2004
- FET Type: N-Channel
- Height: 4.83mm
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Length: 10.67mm
- Additional Feature: AVALANCHE RATED
- Resistance: 280mOhm
- Power Dissipation: 180W
- Current - Continuous Drain (Id) @ 25°C: 15A Tc
- Rise Time: 77 ns
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V
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