SIHF18N50C-E3Vishay Siliconix
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    SIHF18N50C-E3123
    • Manufacturer No：
      SIHF18N50C-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      353424
    • Description：
      MOSFET N-CH 500V 18A TO220
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    SIHF18N50C-E3
    • Manufacturer No：
      SIHF18N50C-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SIHF18N50C-E3
    • SKU：
      353424
    • Description：
      MOSFET N-CH 500V 18A TO220

    User Guide

    User Guide

    SIHF18N50C-E3 Details

    MOSFET N-CH 500V 18A TO220

    SIHF18N50C-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Packaging: Bulk
    • Mount: Through Hole
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Terminations: 3
    • Pin Count: 3
    • Published: 2009
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 500V
    • Gate to Source Voltage (Vgs): 30V
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • JEDEC-95 Code: TO-220AB
    • Vgs (Max): ±30V
    • Turn-Off Delay Time: 45 ns
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Pulsed Drain Current-Max (IDM): 72A
    • Current - Continuous Drain (Id) @ 25°C: 18A Tc
    • Power Dissipation-Max: 38W Tc
    • Rds On (Max) @ Id, Vgs: 270m Ω @ 10A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Pins: 3
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • DS Breakdown Voltage-Min: 500V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 30 ns
    • Continuous Drain Current (ID): 18A
    • Rise Time: 60ns
    • Turn On Delay Time: 22 ns
    • Power Dissipation: 38W
    • Drain-source On Resistance-Max: 0.27Ohm
    • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2942pF @ 25V
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