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- Manufacturer No：SIHFB11N50A-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIHFB11N50A-E3
- SKU：363013
- Description：Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220
User Guide
User Guide
SIHFB11N50A-E3 Details
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220
SIHFB11N50A-E3 Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Terminations: 3
- Pin Count: 3
- Published: 2009
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Vgs (Max): ±30V
- Turn On Delay Time: 14 ns
- Turn-Off Delay Time: 32 ns
- Current - Continuous Drain (Id) @ 25°C: 11A Tc
- Power Dissipation-Max: 170W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
- Rds On (Max) @ Id, Vgs: 520m Ω @ 6.6A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- DS Breakdown Voltage-Min: 500V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code: TO-220AB
- Continuous Drain Current (ID): 11A
- Rise Time: 35ns
- Fall Time (Typ): 28 ns
- Pulsed Drain Current-Max (IDM): 44A
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Drain-source On Resistance-Max: 0.52Ohm
- Avalanche Energy Rating (Eas): 275 mJ
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