SIHP16N50C-E3
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Number of Channels
1Pbfree Code
yesRadiation Hardening
NoFactory Lead Time
8 WeeksNumber of Terminations
3Number of Pins
3Pin Count
3Peak Reflow Temperature (Cel)
260Published
2015Time@Peak Reflow Temperature-Max (s)
40Threshold Voltage
3VREACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VTransistor Element Material
SILICONElement Configuration
SingleDrain to Source Breakdown Voltage
500VGate to Source Voltage (Vgs)
30VOperating Temperature
-55°C~150°C TJPackaging
Cut Tape (CT)FET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Transistor Application
SWITCHINGOperating Mode
ENHANCEMENT MODEContinuous Drain Current (ID)
16APulsed Drain Current-Max (IDM)
40APackage / Case
TO-220-3Subcategory
FET General Purpose PowerJEDEC-95 Code
TO-220ABPower Dissipation
250WVgs (Max)
±30VVgs(th) (Max) @ Id
5V @ 250μATurn On Delay Time
27 nsWeight
6.000006gTurn-Off Delay Time
29 nsFall Time (Typ)
31 nsPower Dissipation-Max
250W TcCurrent - Continuous Drain (Id) @ 25°C
16A TcGate Charge (Qg) (Max) @ Vgs
68nC @ 10VInput Capacitance (Ciss) (Max) @ Vds
1900pF @ 25VRise Time
156nsRds On (Max) @ Id, Vgs
380m Ω @ 8A, 10V