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- Manufacturer No：SIS444DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIS444DN-T1-GE3
- SKU：372157
- Description：Trans MOSFET N-CH 30V 24.9A 8-Pin PowerPAK 1212 T/R
User Guide
User Guide
SIS444DN-T1-GE3 Details
Trans MOSFET N-CH 30V 24.9A 8-Pin PowerPAK 1212 T/R
SIS444DN-T1-GE3 Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- ECCN Code: EAR99
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pin Count: 8
- Number of Terminations: 5
- Published: 2015
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- Continuous Drain Current (ID): 35A
- Fall Time (Typ): 8 ns
- Rise Time: 13 ns
- Turn-Off Delay Time: 33 ns
- Vgs(th) (Max) @ Id: 2.3V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 35A Tc
- Power Dissipation-Max: 52W Tc
- JESD-30 Code: R-PDSO-C5
- Rds On (Max) @ Id, Vgs: 3.3m Ω @ 10A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- RoHS Status: RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Pins: 8
- Terminal Position: DUAL
- Reach Compliance Code: unknown
- Factory Lead Time: 14 Weeks
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Pulsed Drain Current-Max (IDM): 70A
- Turn On Delay Time: 14 ns
- Power Dissipation: 3.7W
- Package / Case: PowerPAK? 1212-8
- Avalanche Energy Rating (Eas): 20 mJ
- Drain-source On Resistance-Max: 0.0033Ohm
- Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
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