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- Manufacturer No：SQ2361EES-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SQ2361EES-T1-GE3
- SKU：319547
- Description：MOSFET 60V 2.5A 2W P.CH 150mohm @ 10V
User Guide
User Guide
SQ2361EES-T1-GE3 Details
MOSFET 60V 2.5A 2W P.CH 150mohm @ 10V
SQ2361EES-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Drain to Source Voltage (Vdss): 60V
- REACH SVHC: Unknown
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Continuous Drain Current (ID): 2.5A
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Fall Time (Typ): 8 ns
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Turn-Off Delay Time: 19 ns
- Weight: 1.437803g
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 2.5A Tc
- Nominal Vgs: -2.5 V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Published: 2013
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Power Dissipation: 2W
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Subcategory: Other Transistors
- Rise Time: 8ns
- Packaging: Digi-Reel?
- Turn On Delay Time: 7 ns
- Series: TrenchFET?
- Drain to Source Breakdown Voltage: -60V
- Threshold Voltage: -1.5V
- Feedback Cap-Max (Crss): 50 pF
- Power Dissipation-Max: 2W Tc
- Rds On (Max) @ Id, Vgs: 150m Ω @ 2.4A, 10V
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