SQD23N06-31L_GE3Vishay Siliconix
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    SQD23N06-31L_GE3123
    • Manufacturer No：
      SQD23N06-31L_GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      301682
    • Description：
      Automotive N-Channel 60 V (D-S) 175 °C MOSFET
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    Inventory:2201
    • Qty Unit Price price
    • 1 $0.773 $0.773
    • 10 $0.765 $7.65
    • 100 $0.757 $75.7
    • 1000 $0.749 $749
    • 10000 $0.741 $7410

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    SQD23N06-31L_GE3
    • Manufacturer No：
      SQD23N06-31L_GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SQD23N06-31L_GE3
    • SKU：
      301682
    • Description：
      Automotive N-Channel 60 V (D-S) 175 °C MOSFET

    User Guide

    User Guide

    SQD23N06-31L_GE3 Details

    Automotive N-Channel 60 V (D-S) 175 °C MOSFET

    SQD23N06-31L_GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Min Operating Temperature: -55°C
    • Number of Pins: 3
    • Drain to Source Breakdown Voltage: 60V
    • Max Operating Temperature: 175°C
    • Element Configuration: Single
    • Power Dissipation: 3W
    • Height: 2.39mm
    • Technology: MOSFET (Metal Oxide)
    • Vgs (Max): ±20V
    • Length: 6.73mm
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Rise Time: 15ns
    • Turn On Delay Time: 8 ns
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Weight: 1.437803g
    • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 23A Tc
    • Rds On Max: 31 mΩ
    • Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Lead Free: Lead Free
    • Factory Lead Time: 12 Weeks
    • Drain to Source Voltage (Vdss): 60V
    • Published: 2014
    • REACH SVHC: Unknown
    • Gate to Source Voltage (Vgs): 20V
    • Threshold Voltage: 2V
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Continuous Drain Current (ID): 23A
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Fall Time (Typ): 25 ns
    • Turn-Off Delay Time: 30 ns
    • Width: 6.22mm
    • Series: TrenchFET?
    • Drain to Source Resistance: 31mOhm
    • Supplier Device Package: TO-252, (D-Pak)
    • Power Dissipation-Max: 37W Tc
    • Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
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