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- Manufacturer No：SQM60N06-15_GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SQM60N06-15_GE3
- SKU：334395
- Description：MOSFET N-CH 60V 56A TO263
User Guide
User Guide
SQM60N06-15_GE3 Details
MOSFET N-CH 60V 56A TO263
SQM60N06-15_GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Drain to Source Breakdown Voltage: 60V
- Published: 2014
- REACH SVHC: Unknown
- Element Configuration: Single
- FET Type: N-Channel
- Height: 4.83mm
- Vgs (Max): ±20V
- Drain to Source Resistance: 15mOhm
- Turn On Delay Time: 10 ns
- Turn-Off Delay Time: 20 ns
- Rise Time: 12ns
- Series: TrenchFET?
- Weight: 1.437803g
- Vgs(th) (Max) @ Id: 3.5V @ 250μA
- Power Dissipation-Max: 107W Tc
- Rds On Max: 15 mΩ
- Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- Drain to Source Voltage (Vdss): 60V
- Threshold Voltage: 2.5V
- Max Operating Temperature: 175°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Resistance: 15mOhm
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ): 10 ns
- Width: 9.65mm
- Supplier Device Package: TO-263 (D2Pak)
- Length: 10.41mm
- Continuous Drain Current (ID): 56A
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 56A Tc
- Power Dissipation: 107W
- Input Capacitance: 2.48nF
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