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- Manufacturer No：SQJ463EP-T1_GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SQJ463EP-T1_GE3
- SKU：381535
- Description：MOSFET P-CH 40V 30A
User Guide
User Guide
SQJ463EP-T1_GE3 Details
MOSFET P-CH 40V 30A
SQJ463EP-T1_GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Number of Pins: 8
- Published: 2014
- REACH SVHC: Unknown
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 40V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Drain to Source Breakdown Voltage: -40V
- Package / Case: PowerPAK? SO-8
- Weight: 506.605978mg
- Power Dissipation: 83W
- Fall Time (Typ): 51 ns
- Power Dissipation-Max: 83W Tc
- Rds On Max: 10 mΩ
- Continuous Drain Current (ID): -30A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Factory Lead Time: 12 Weeks
- Max Operating Temperature: 175°C
- Element Configuration: Single
- Drain to Source Resistance: 10mOhm
- Voltage: 40V
- Current: 30A
- Vgs (Max): ±20V
- FET Type: P-Channel
- Turn On Delay Time: 21 ns
- Threshold Voltage: -2V
- Supplier Device Package: PowerPAK? SO-8
- Current - Continuous Drain (Id) @ 25°C: 30A Tc
- Series: Automotive, AEC-Q101, TrenchFET?
- Rise Time: 17ns
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Turn-Off Delay Time: 121 ns
- Rds On (Max) @ Id, Vgs: 10mOhm @ 18A, 10V
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