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- Manufacturer No：SQJ858AEP-T1_GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SQJ858AEP-T1_GE3
- SKU：301477
- Description：MOSFET N-CH 40V 58A
User Guide
User Guide
SQJ858AEP-T1_GE3 Details
MOSFET N-CH 40V 58A
SQJ858AEP-T1_GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Factory Lead Time: 12 Weeks
- Max Operating Temperature: 175°C
- Element Configuration: Single
- Threshold Voltage: 2V
- Drain to Source Breakdown Voltage: 40V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Package / Case: PowerPAK? SO-8
- Power Dissipation: 48W
- Weight: 506.605978mg
- Series: Automotive, AEC-Q101, TrenchFET?
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Drain to Source Resistance: 6.3mOhm
- Input Capacitance: 2.45nF
- Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Number of Pins: 8
- Published: 2014
- REACH SVHC: Unknown
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 40V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Turn On Delay Time: 10 ns
- Fall Time (Typ): 8 ns
- Turn-Off Delay Time: 26 ns
- Supplier Device Package: PowerPAK? SO-8
- Rise Time: 9ns
- Continuous Drain Current (ID): 58A
- Power Dissipation-Max: 48W Tc
- Current - Continuous Drain (Id) @ 25°C: 58A Tc
- Rds On Max: 6.3 mΩ
- Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
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