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- Manufacturer No：SQM120N03-1M5L_GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SQM120N03-1M5L_GE3
- SKU：343475
- Description：Automotive N-Channel 30 V (D-S) 175 °C MOSFET
User Guide
User Guide
SQM120N03-1M5L_GE3 Details
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
SQM120N03-1M5L_GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Max Operating Temperature: 175°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Threshold Voltage: 2V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 11 ns
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Supplier Device Package: TO-263
- Rise Time: 11ns
- Power Dissipation: 375W
- Power Dissipation-Max: 375W Tc
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15605pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Number of Pins: 3
- REACH SVHC: Unknown
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID): 120A
- Turn On Delay Time: 18 ns
- Series: TrenchFET?
- Current - Continuous Drain (Id) @ 25°C: 120A Tc
- Drain to Source Resistance: 1.5mOhm
- Turn-Off Delay Time: 64 ns
- Weight: 1.946308g
- Rds On Max: 1.5 mΩ
- Input Capacitance: 15.605nF
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