SUD50N03-09P-E3Vishay Siliconix
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    SUD50N03-09P-E3123
    • Manufacturer No：
      SUD50N03-09P-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      320304
    • Description：
      MOSFET 30V 63A 65.2W
    • Quantity：
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    • Qty Unit Price price
    • 1 $0.7 $0.7
    • 10 $0.693 $6.93
    • 100 $0.686 $68.6
    • 1000 $0.679 $679
    • 10000 $0.6716 $6716

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    SUD50N03-09P-E3
    • Manufacturer No：
      SUD50N03-09P-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUD50N03-09P-E3
    • SKU：
      320304
    • Description：
      MOSFET 30V 63A 65.2W

    User Guide

    User Guide

    SUD50N03-09P-E3 Details

    MOSFET 30V 63A 65.2W

    SUD50N03-09P-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Pin Count: 4
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Height: 2.39mm
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Drain Current-Max (Abs) (ID): 50A
    • Case Connection: DRAIN
    • Length: 6.73mm
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Fall Time (Typ): 8 ns
    • Width: 6.22mm
    • Turn-Off Delay Time: 22 ns
    • Power Dissipation: 7.5W
    • Weight: 1.437803g
    • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
    • Current - Continuous Drain (Id) @ 25°C: 63A Tc
    • Power Dissipation-Max: 7.5W Ta 65.2W Tc
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Pins: 3
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Pulsed Drain Current-Max (IDM): 50A
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Rise Time: 15 ns
    • Turn On Delay Time: 9 ns
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Series: TrenchFET?
    • Continuous Drain Current (ID): 63A
    • Resistance: 9.5mOhm
    • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 9.5m Ω @ 20A, 10V
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