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SUD50N03-12P-GE3123
  • Manufacturer No:
    SUD50N03-12P-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    395878
  • Description:
    MOSFET 30V 0.012ohm@10V 17.5A N-CH
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SUD50N03-12P-GE3
  • Manufacturer No:
    SUD50N03-12P-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SUD50N03-12P-GE3
  • SKU:
    395878
  • Description:
    MOSFET 30V 0.012ohm@10V 17.5A N-CH

SUD50N03-12P-GE3 Details

MOSFET 30V 0.012ohm@10V 17.5A N-CH

SUD50N03-12P-GE3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Contact Plating: Tin
  • Part Status: Obsolete
  • Published: 2014
  • Element Configuration: Single
  • Drain to Source Voltage (Vdss): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Turn-Off Delay Time: 20 ns
  • Fall Time (Typ): 12 ns
  • Turn On Delay Time: 9 ns
  • Drain to Source Resistance: 12mOhm
  • Supplier Device Package: TO-252
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Power Dissipation-Max: 39W Tc
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Channels: 1
  • Min Operating Temperature: -55°C
  • Number of Pins: 3
  • Max Operating Temperature: 175°C
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Breakdown Voltage: 30V
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Rise Time: 15ns
  • Continuous Drain Current (ID): 17.5A
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Series: TrenchFET?
  • Input Capacitance: 1.6nF
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Rds On Max: 17 mΩ
  • Current - Continuous Drain (Id) @ 25°C: 16.8A Ta

Excellent

Based on reviews

Excellent

Based on reviews

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