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- Manufacturer No：SUP85N03-04P-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SUP85N03-04P-E3
- SKU：330377
- Description：MOSFET N-CH 30V 85A TO220AB
User Guide
User Guide
SUP85N03-04P-E3 Details
MOSFET N-CH 30V 85A TO220AB
SUP85N03-04P-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Published: 2008
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Supplier Device Package: TO-220AB
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Rise Time: 12ns
- Fall Time (Typ): 22 ns
- Length: 10.4902mm
- Continuous Drain Current (ID): 85A
- Resistance: 4.3MOhm
- Current - Continuous Drain (Id) @ 25°C: 85A Tc
- Power Dissipation: 166W
- Input Capacitance: 4.5nF
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Max Operating Temperature: 175°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-220-3
- Turn-Off Delay Time: 50 ns
- Turn On Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Width: 4.6482mm
- Height: 15.494mm
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Drain to Source Resistance: 4.3mOhm
- Rds On Max: 4.3 mΩ
- Power Dissipation-Max: 3.75W Ta 166W Tc
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