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- Manufacturer No：IPD90R1K2C3ATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPD90R1K2C3ATMA1
- SKU：10936803
- Description：Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) TO-252
User Guide
User Guide
IPD90R1K2C3ATMA1 Details
Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) TO-252
IPD90R1K2C3ATMA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Rise Time: 20ns
- Drain to Source Resistance: 1.2Ohm
- Max Dual Supply Voltage: 900V
- Continuous Drain Current (ID): 5.1A
- Power Dissipation: 83W
- Power Dissipation-Max: 83W Tc
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 5.1A Tc
- Vgs(th) (Max) @ Id: 3.5V @ 310μA
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Lead Free: Lead Free
- Number of Pins: 3
- Published: 2008
- Factory Lead Time: 18 Weeks
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Vgs (Max): ±20V
- Fall Time (Typ): 40 ns
- Turn On Delay Time: 70 ns
- Drain to Source Voltage (Vdss): 900V
- Turn-Off Delay Time: 400 ns
- Series: CoolMOS?
- Weight: 3.949996g
- Supplier Device Package: PG-TO252-3
- Rds On Max: 1.2 Ω
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
- Input Capacitance: 710pF
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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