S1M-E3/5AT
Vishay Semiconductor Diodes Division
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Number of Terminations
2Number of Pins
2Pin Count
2Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1ECCN Code
EAR99Pbfree Code
yesRadiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeContact Plating
TinMin Operating Temperature
-55°CTerminal Position
DUALPeak Reflow Temperature (Cel)
260Published
2011Time@Peak Reflow Temperature-Max (s)
30Max Operating Temperature
150°CMax Junction Temperature (Tj)
150°CAverage Rectified Current
1AForward Current
1ACurrent
1AREACH SVHC
UnknownFactory Lead Time
11 WeeksDiode Element Material
SILICONElement Configuration
SingleDiode Type
StandardOperating Temperature - Junction
-55°C~150°CHeight
2.29mmWidth
2.79mmVoltage
1kVMax Reverse Voltage (DC)
1kVMax Repetitive Reverse Voltage (Vrrm)
1kVReverse Voltage
1kVMax Surge Current
30APeak Non-Repetitive Surge Current
30AMax Forward Surge Current (Ifsm)
30ALength
4.5mmHTS Code
8541.10.00.80Capacitance
12pFPeak Reverse Current
5μAPackage / Case
DO-214AC, SMAVoltage - DC Reverse (Vr) (Max)
1000VTerminal Form
C BENDSubcategory
Rectifier DiodesSpeed
Standard Recovery >500ns, > 200mA (Io)Forward Voltage
1.1VVoltage - Forward (Vf) (Max) @ If
1.1V @ 1ACurrent - Reverse Leakage @ Vr
5μA @ 1000VAdditional Feature
LOW LEAKAGE CURRENTReverse Recovery Time
1.8 μsRecovery Time
1.8 μsCapacitance @ Vr, F
12pF @ 4V 1MHzBase Part Number
S1M