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- Manufacturer No：IRFD9010PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD9010PBF
- SKU：161113
- Description：MOSFET P-CH 50V 1.1A 4-DIP
User Guide
User Guide
IRFD9010PBF Details
MOSFET P-CH 50V 1.1A 4-DIP
IRFD9010PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Lead Free: Lead Free
- Number of Pins: 4
- Packaging: Tube
- Drain to Source Breakdown Voltage: 50V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Width: 5.0038mm
- FET Type: P-Channel
- Turn-Off Delay Time: 13 ns
- Input Capacitance: 240pF
- Package / Case: 4-DIP (0.300, 7.62mm)
- Rds On Max: 500 mΩ
- Threshold Voltage: -4V
- Power Dissipation-Max: 1W Tc
- Height: 3.3782mm
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
- Continuous Drain Current (ID): -1.1A
- Length: 6.2738mm
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Factory Lead Time: 8 Weeks
- Drain to Source Voltage (Vdss): 50V
- Power Dissipation: 1W
- Published: 2010
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain to Source Resistance: 350mOhm
- Voltage - Rated DC: -50V
- Fall Time (Typ): 39 ns
- Turn On Delay Time: 6.1 ns
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Rise Time: 47ns
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Current Rating: -1.1A
- Current - Continuous Drain (Id) @ 25°C: 1.1A Tc
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