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- Manufacturer No：IRFD014PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD014PBF
- SKU：161501
- Description：MOSFET N-CH 60V 1.7A 4-DIP
User Guide
User Guide
IRFD014PBF Details
MOSFET N-CH 60V 1.7A 4-DIP
IRFD014PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Factory Lead Time: 8 Weeks
- Drain to Source Voltage (Vdss): 60V
- Published: 2014
- REACH SVHC: Unknown
- Element Configuration: Single
- FET Type: N-Channel
- Width: 5.0038mm
- Operating Temperature: -55°C~175°C TJ
- Turn On Delay Time: 10 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Resistance: 200mOhm
- Power Dissipation: 1.3W
- Turn-Off Delay Time: 13 ns
- Package / Case: 4-DIP (0.300, 7.62mm)
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Height: 3.3782mm
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Input Capacitance: 310pF
- Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Number of Pins: 4
- Packaging: Tube
- Drain to Source Breakdown Voltage: 60V
- Max Operating Temperature: 175°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Threshold Voltage: 4V
- Vgs (Max): ±20V
- Fall Time (Typ): 50 ns
- Continuous Drain Current (ID): 1.7A
- Drain to Source Resistance: 200mOhm
- Rise Time: 50ns
- Recovery Time: 140 ns
- Rds On Max: 200 mΩ
- Power Dissipation-Max: 1.3W Ta
- Current - Continuous Drain (Id) @ 25°C: 1.7A Ta
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
- Length: 6.2738mm
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