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Inventory:84000
  • Qty Unit Price price
  • 1 $0.106 $0.106
  • 10 $0.104 $1.04
  • 100 $0.102 $10.2
  • 1000 $0.1 $100
  • 10000 $0.0983 $983

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  • Manufacturer No:
    DMG6601LVT-7
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    DMG6601LVT-7
  • SKU:
    1815705
  • Description:
    MOSFET N/P-CH 30V 26TSOT

DMG6601LVT-7 Details

MOSFET N/P-CH 30V 26TSOT

DMG6601LVT-7 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • Pbfree Code: yes
  • Contact Plating: Gold
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Terminations: 6
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Max Junction Temperature (Tj): 150°C
  • Published: 2009
  • Factory Lead Time: 15 Weeks
  • Drain to Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • Packaging: Cut Tape (CT)
  • Continuous Drain Current (ID): 2.5A
  • Additional Feature: HIGH RELIABILITY
  • JESD-30 Code: R-PDSO-G6
  • FET Feature: Logic Level Gate
  • Reference Standard: AEC-Q101
  • Rise Time: 4.6 ns
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Turn On Delay Time: 1.7 ns
  • Power Dissipation: 850mW
  • Turn-Off Delay Time: 18.3 ns
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Gate to Source Voltage (Vgs): 12V
  • Width: 1.6mm
  • Transistor Element Material: SILICON
  • Height: 1mm
  • Number of Pins: 26
  • Length: 2.9mm
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Drain Current-Max (Abs) (ID): 3.8A
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • FET Type: N and P-Channel
  • Fall Time (Typ): 2.2 ns
  • Max Power Dissipation: 850mW
  • Drain-source On Resistance-Max: 0.055Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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