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- Manufacturer No：IRF840SPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF840SPBF
- SKU：189888
- Description：Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK
User Guide
User Guide
IRF840SPBF Details
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK
IRF840SPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Packaging: Tube
- Termination: SMD/SMT
- Max Operating Temperature: 150°C
- Published: 2009
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Height: 5.08mm
- Drain to Source Breakdown Voltage: 500V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Vgs (Max): ±20V
- Fall Time (Typ): 20 ns
- Length: 10.67mm
- Turn On Delay Time: 14 ns
- Nominal Vgs: 4 V
- Power Dissipation: 3.1W
- Resistance: 850mOhm
- Current - Continuous Drain (Id) @ 25°C: 8A Tc
- Rise Time: 23ns
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Power Dissipation-Max: 3.1W Ta 125W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 3
- REACH SVHC: No SVHC
- Max Junction Temperature (Tj): 150°C
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 500V
- Dual Supply Voltage: 500V
- Threshold Voltage: 2V
- Continuous Drain Current (ID): 8A
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Width: 9.65mm
- Supplier Device Package: D2PAK
- Weight: 1.437803g
- Input Capacitance: 1.3nF
- Drain to Source Resistance: 850mOhm
- Turn-Off Delay Time: 49 ns
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Rds On Max: 850 mΩ
- Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
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