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- Manufacturer No：IRFU9010PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFU9010PBF
- SKU：190902
- Description：MOSFET P-CH 50V 5.3A I-PAK
User Guide
User Guide
IRFU9010PBF Details
MOSFET P-CH 50V 5.3A I-PAK
IRFU9010PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- FET Type: P-Channel
- Resistance: 500mOhm
- Turn-Off Delay Time: 13 ns
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Turn On Delay Time: 6.1 ns
- Power Dissipation-Max: 25W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Breakdown Voltage: 50V
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Fall Time (Typ): 35 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Additional Feature: AVALANCHE RATED
- Pulsed Drain Current-Max (IDM): 21A
- Continuous Drain Current (ID): 5.3A
- Rise Time: 47 ns
- Current - Continuous Drain (Id) @ 25°C: 5.3A Tc
- Current Rating: -5.3A
- Rds On (Max) @ Id, Vgs: 500m Ω @ 2.8A, 10V
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