IRFP460APBF
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Number of Channels
1Radiation Hardening
NoLead Free
Lead FreeFactory Lead Time
12 WeeksPackaging
TubeNumber of Terminations
3Number of Pins
3Pin Count
3Peak Reflow Temperature (Cel)
260Time@Peak Reflow Temperature-Max (s)
40Max Junction Temperature (Tj)
150°CPublished
2007REACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VTransistor Element Material
SILICONElement Configuration
SingleVoltage - Rated DC
500VDrain to Source Breakdown Voltage
500VGate to Source Voltage (Vgs)
30VCurrent Rating
20AContinuous Drain Current (ID)
20AOperating Temperature
-55°C~150°C TJFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Threshold Voltage
4VTransistor Application
SWITCHINGOperating Mode
ENHANCEMENT MODEPulsed Drain Current-Max (IDM)
80AVgs(th) (Max) @ Id
4V @ 250μAVgs (Max)
±30VPackage / Case
TO-247-3Turn-Off Delay Time
45 nsLength
15.87mmRise Time
55 nsTurn On Delay Time
18 nsResistance
270mOhmNominal Vgs
2 VWidth
5.31mmFall Time (Typ)
39 nsCurrent - Continuous Drain (Id) @ 25°C
20A TcWeight
38.000013gPower Dissipation
280WGate Charge (Qg) (Max) @ Vgs
105nC @ 10VInput Capacitance (Ciss) (Max) @ Vds
3100pF @ 25VPower Dissipation-Max
280W TcAvalanche Energy Rating (Eas)
960 mJRds On (Max) @ Id, Vgs
270m Ω @ 12A, 10VHeight
25.11mm