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  • Manufacturer No:
    IRFP460APBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    213052
  • Description:
    Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247
  • Quantity:
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Inventory:7050
  • Qty Unit Price price
  • 1 $4.602 $4.602
  • 10 $4.556 $45.56
  • 100 $4.51 $451
  • 1000 $4.465 $4465
  • 10000 $4.42 $44200

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  • Manufacturer No:
    IRFP460APBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFP460APBF
  • SKU:
    213052
  • Description:
    Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247

IRFP460APBF Details

Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247

IRFP460APBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • REACH SVHC: Unknown
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 500V
  • Gate to Source Voltage (Vgs): 30V
  • Continuous Drain Current (ID): 20A
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Mode: ENHANCEMENT MODE
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Package / Case: TO-247-3
  • Length: 15.87mm
  • Turn On Delay Time: 18 ns
  • Nominal Vgs: 2 V
  • Fall Time (Typ): 39 ns
  • Weight: 38.000013g
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Power Dissipation-Max: 280W Tc
  • Rds On (Max) @ Id, Vgs: 270m Ω @ 12A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2007
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 500V
  • Current Rating: 20A
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Pulsed Drain Current-Max (IDM): 80A
  • Vgs (Max): ±30V
  • Turn-Off Delay Time: 45 ns
  • Rise Time: 55 ns
  • Resistance: 270mOhm
  • Width: 5.31mm
  • Current - Continuous Drain (Id) @ 25°C: 20A Tc
  • Power Dissipation: 280W
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
  • Avalanche Energy Rating (Eas): 960 mJ
  • Height: 25.11mm

Excellent

Based on reviews

Excellent

Based on reviews

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