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- Manufacturer No：IRFI820GPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFI820GPBF
- SKU：158648
- Description：MOSFET N-CH 500V 2.1A TO220FP
User Guide
User Guide
IRFI820GPBF Details
MOSFET N-CH 500V 2.1A TO220FP
IRFI820GPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Peak Reflow Temperature (Cel): 260
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- Published: 2004
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Isolation Voltage: 2kV
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 8 ns
- Fall Time (Typ): 16 ns
- Pulsed Drain Current-Max (IDM): 8.4A
- Weight: 6.000006g
- Rise Time: 8.6 ns
- Length: 10.63mm
- Recovery Time: 520 ns
- Rds On (Max) @ Id, Vgs: 3 Ω @ 1.3A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Time@Peak Reflow Temperature-Max (s): 40
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Width: 4.83mm
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Power Dissipation: 30W
- Resistance: 3Ohm
- Continuous Drain Current (ID): 2.1A
- Height: 9.8mm
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Turn-Off Delay Time: 33 ns
- Power Dissipation-Max: 30W Tc
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 2.1A Tc
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