IRFD010Vishay Siliconix
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    • Manufacturer No：
      IRFD010
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      220024
    • Description：
      MOSFET N-CH 50V 1.7A 4-DIP
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    • Manufacturer No：
      IRFD010
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFD010
    • SKU：
      220024
    • Description：
      MOSFET N-CH 50V 1.7A 4-DIP

    User Guide

    User Guide

    IRFD010 Details

    MOSFET N-CH 50V 1.7A 4-DIP

    IRFD010 Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • RoHS Status: Non-RoHS Compliant
    • Number of Pins: 4
    • Lead Free: Contains Lead
    • Drain to Source Voltage (Vdss): 50V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Vgs (Max): ±20V
    • Current Rating: 1.7A
    • Drain to Source Resistance: 200mOhm
    • Rds On Max: 200 mΩ
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
    • Weight: 639.990485mg
    • Current - Continuous Drain (Id) @ 25°C: 1.7A Tc
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 860mA, 10V
    • Mounting Type: Through Hole
    • Number of Channels: 1
    • Part Status: Obsolete
    • Packaging: Tube
    • Voltage - Rated DC: 50V
    • Drain to Source Breakdown Voltage: 50V
    • Element Configuration: Single
    • Published: 2000
    • Technology: MOSFET (Metal Oxide)
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Continuous Drain Current (ID): 1.7A
    • Package / Case: 4-DIP (0.300, 7.62mm)
    • Input Capacitance: 250pF
    • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
    • Power Dissipation-Max: 1W Tc
    • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
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