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- Manufacturer No：IRFBF30PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFBF30PBF
- SKU：234200
- Description：Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB
User Guide
User Guide
IRFBF30PBF Details
Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB
IRFBF30PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2011
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain to Source Voltage (Vdss): 900V
- Continuous Drain Current (ID): 3.6A
- Turn-Off Delay Time: 90 ns
- Length: 10.41mm
- Weight: 6.000006g
- Power Dissipation-Max: 125W Tc
- Drain to Source Resistance: 3.7Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 3.6A Tc
- Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Fall Time (Typ): 30 ns
- Rise Time: 25ns
- Turn On Delay Time: 14 ns
- Input Capacitance: 1.2nF
- Power Dissipation: 125W
- Nominal Vgs: 4 V
- Resistance: 3.7Ohm
- Height: 9.01mm
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Rds On Max: 3.7 Ω
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