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  • Manufacturer No:
    SI4532ADY-T1-E3
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    244341
  • Description:
    VISHAY - SI4532ADY-T1-E3 - DUAL N/P CHANNEL MOSFET, 30V, SOIC
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  • 10 $0.914 $9.14
  • 100 $0.904 $90.4
  • 1000 $0.895 $895

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  • Manufacturer No:
    SI4532ADY-T1-E3
  • Manufacturer:
    Vishay
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SI4532ADY-T1-E3
  • SKU:
    244341
  • Description:
    VISHAY - SI4532ADY-T1-E3 - DUAL N/P CHANNEL MOSFET, 30V, SOIC

SI4532ADY-T1-E3 Details

VISHAY - SI4532ADY-T1-E3 - DUAL N/P CHANNEL MOSFET, 30V, SOIC

SI4532ADY-T1-E3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • Peak Reflow Temperature (Cel): 260
  • Published: 2006
  • Transistor Element Material: SILICON
  • Length: 5mm
  • Gate to Source Voltage (Vgs): 20V
  • Width: 4mm
  • Threshold Voltage: 1V
  • Terminal Finish: MATTE TIN
  • Fall Time (Typ): 10 ns
  • Height: 1.55mm
  • Turn On Delay Time: 8 ns
  • Resistance: 80mOhm
  • Series: TrenchFET?
  • Turn-Off Delay Time: 21 ns
  • FET Type: N and P-Channel
  • Nominal Vgs: 1 V
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Rds On (Max) @ Id, Vgs: 53m Ω @ 4.9A, 10V
  • Power - Max: 1.13W 1.2W
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Pin Count: 8
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 40
  • REACH SVHC: Unknown
  • Factory Lead Time: 15 Weeks
  • Power Dissipation: 2W
  • Drain to Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Operating Mode: ENHANCEMENT MODE
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Max Power Dissipation: 1.2W
  • Rise Time: 9 ns
  • FET Feature: Logic Level Gate
  • Drain Current-Max (Abs) (ID): 3.7A
  • Continuous Drain Current (ID): 4.9A
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Weight: 186.993455mg
  • Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
  • Base Part Number: SI4532
  • Current - Continuous Drain (Id) @ 25°C: 3.7A 3A

Vishay — Manufacturer Introduction

Vishay Intertechnology is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Vishay has grown through acquisitions to include such top names as Dale, Sfernice, Draloric, Sprague, Vitramon, Siliconix, General Semiconductor, BCcomponents, and Beyschlag. Vishay's portfolio of brands represents an unmatched collection of discrete semiconductors and passive components. All of these brands and products are part of one global manufacturer: Vishay.

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