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- Manufacturer No：IRFU320PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFU320PBF
- SKU：244426
- Description：MOSFET N-CH 400V 3.1A I-PAK
User Guide
User Guide
IRFU320PBF Details
MOSFET N-CH 400V 3.1A I-PAK
IRFU320PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 400V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Turn On Delay Time: 10 ns
- Turn-Off Delay Time: 30 ns
- Height: 6.22mm
- Fall Time (Typ): 13 ns
- Current Rating: 3.1A
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Width: 2.38mm
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 3.1A Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Published: 2008
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Voltage - Rated DC: 400V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Length: 6.73mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Resistance: 1.8Ohm
- Additional Feature: AVALANCHE RATED
- Rise Time: 14 ns
- Continuous Drain Current (ID): 3.1A
- Subcategory: FET General Purpose Powers
- Power Dissipation: 42W
- Weight: 329.988449mg
- Power Dissipation-Max: 2.5W Ta 42W Tc
- Rds On (Max) @ Id, Vgs: 1.8 Ω @ 1.9A, 10V
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