SI4952DY-T1-GE3Vishay Siliconix
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    • Manufacturer No：
      SI4952DY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      246294
    • Description：
      MOSFET 2N-CH 25V 8A 8-SOIC
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    • Manufacturer No：
      SI4952DY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI4952DY-T1-GE3
    • SKU：
      246294
    • Description：
      MOSFET 2N-CH 25V 8A 8-SOIC

    User Guide

    User Guide

    SI4952DY-T1-GE3 Details

    MOSFET 2N-CH 25V 8A 8-SOIC

    SI4952DY-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Terminations: 8
    • Published: 2016
    • Peak Reflow Temperature (Cel): 260
    • Element Configuration: Dual
    • Drain to Source Breakdown Voltage: 25V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 16V
    • Operating Temperature: -55°C~150°C TJ
    • Drain Current-Max (Abs) (ID): 8A
    • Pulsed Drain Current-Max (IDM): 30A
    • Operating Mode: ENHANCEMENT MODE
    • Fall Time (Typ): 50 ns
    • Turn On Delay Time: 15 ns
    • Height: 1.55mm
    • FET Feature: Logic Level Gate
    • Max Power Dissipation: 1.8W
    • FET Type: 2 N-Channel (Dual)
    • Terminal Finish: PURE MATTE TIN
    • Weight: 186.993455mg
    • Nominal Vgs: 2.2 V
    • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Pin Count: 8
    • Terminal Form: GULL WING
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drain to Source Voltage (Vdss): 25V
    • REACH SVHC: Unknown
    • Length: 5mm
    • Width: 4mm
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Continuous Drain Current (ID): 8A
    • Transistor Application: SWITCHING
    • Threshold Voltage: 2.2V
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Turn-Off Delay Time: 20 ns
    • Rise Time: 50ns
    • Power Dissipation: 1.8W
    • Series: TrenchFET?
    • Vgs(th) (Max) @ Id: 2.2V @ 250μA
    • Power - Max: 2.8W
    • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
    • Rds On (Max) @ Id, Vgs: 23m Ω @ 7A, 10V
    • Base Part Number: SI4952
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