SI4426DY-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI4426DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      246527
    • Description：
      Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R
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    • Qty Unit Price price
    • 1 $101.383 $101.383
    • 10 $100.379 $1003.79
    • 100 $99.385 $9938.5
    • 1000 $98.4 $98400
    • 10000 $97.4256 $974256

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    • Manufacturer No：
      SI4426DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI4426DY-T1-E3
    • SKU：
      246527
    • Description：
      Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R

    User Guide

    User Guide

    SI4426DY-T1-E3 Details

    Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R

    SI4426DY-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Pin Count: 8
    • Published: 2016
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Length: 5mm
    • Width: 4mm
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • FET Type: N-Channel
    • Power Dissipation: 1.5W
    • Resistance: 25mOhm
    • Continuous Drain Current (ID): 6.5A
    • Turn On Delay Time: 40 ns
    • Turn-Off Delay Time: 90 ns
    • Vgs (Max): ±12V
    • Weight: 506.605978mg
    • Vgs(th) (Max) @ Id: 1.4V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 6.5A Ta
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Gate to Source Voltage (Vgs): 12V
    • Factory Lead Time: 14 Weeks
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 20V
    • Operating Temperature: -55°C~150°C TJ
    • Terminal Finish: MATTE TIN
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Height: 1.55mm
    • Fall Time (Typ): 40 ns
    • Rise Time: 40 ns
    • Series: TrenchFET?
    • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
    • Power Dissipation-Max: 1.5W Ta
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 25m Ω @ 8.5A, 4.5V
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