Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:16685
- Qty Unit Price price
- 1 $1846.034 $1846.034
- 10 $1827.756 $18277.56
- 100 $1809.659 $180965.9
- 1000 $1791.741 $1791741
- 10000 $1774 $17740000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI4948BEY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4948BEY-T1-E3
- SKU：247474
- Description：MOSFET 2P-CH 60V 2.4A 8-SOIC
User Guide
User Guide
SI4948BEY-T1-E3 Details
MOSFET 2P-CH 60V 2.4A 8-SOIC
SI4948BEY-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- REACH SVHC: No SVHC
- Drain to Source Voltage (Vdss): 60V
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Temperature: -55°C~175°C TJ
- Turn On Delay Time: 10 ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Rise Time: 15 ns
- Max Power Dissipation: 1.4W
- Current - Continuous Drain (Id) @ 25°C: 2.4A
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- FET Type: 2 P-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Continuous Drain Current (ID): -3.1A
- Base Part Number: SI4948
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- DS Breakdown Voltage-Min: 60V
- Factory Lead Time: 14 Weeks
- Published: 2009
- Length: 5mm
- Width: 4mm
- Terminal Finish: MATTE TIN
- Operating Mode: ENHANCEMENT MODE
- Turn-Off Delay Time: 50 ns
- Fall Time (Typ): 15 ns
- Height: 1.55mm
- Power Dissipation: 1.4W
- Resistance: 120mOhm
- FET Feature: Logic Level Gate
- Threshold Voltage: -3V
- Weight: 186.993455mg
- Nominal Vgs: -3 V
- Rds On (Max) @ Id, Vgs: 120m Ω @ 3.1A, 10V
Search for similar products
SI4948BEY-T1-E3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI4948BEY-T1-E3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
