Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:50085
- Qty Unit Price price
- 1 $0.792 $0.792
- 10 $0.784 $7.84
- 100 $0.776 $77.6
- 1000 $0.768 $768
- 10000 $0.76 $7600
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI2308BDS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2308BDS-T1-GE3
- SKU：250450
- Description：VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V
User Guide
User Guide
SI2308BDS-T1-GE3 Details
VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V
SI2308BDS-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Surface Mount: YES
- Terminal Position: DUAL
- Number of Pins: 3
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- DS Breakdown Voltage-Min: 60V
- Published: 2011
- Factory Lead Time: 14 Weeks
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Drain Current-Max (Abs) (ID): 1.9A
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Power Dissipation: 1.09W
- Current - Continuous Drain (Id) @ 25°C: 2.3A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
- Rds On (Max) @ Id, Vgs: 156m Ω @ 1.9A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e4
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Drain to Source Voltage (Vdss): 60V
- Reach Compliance Code: unknown
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Configuration: SINGLE WITH BUILT-IN DIODE
- Terminal Finish: Silver (Ag)
- Continuous Drain Current (ID): 2.3A
- HTS Code: 8541.29.00.95
- Subcategory: FET General Purpose Powers
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
- Drain-source On Resistance-Max: 0.156Ohm
- Power Dissipation-Max: 1.09W Ta 1.66W Tc
Search for similar products
SI2308BDS-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI2308BDS-T1-GE3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
