IRFZ40Vishay Siliconix
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    IRFZ40123
    • Manufacturer No：
      IRFZ40
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      218803
    • Description：
      MOSFET N-CH 60V 50A TO220AB
    • Quantity：
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    Inventory:2325
    • Qty Unit Price price
    • 1 $2.78 $2.78
    • 10 $2.752 $27.52
    • 100 $2.724 $272.4
    • 1000 $2.697 $2697
    • 10000 $2.67 $26700

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    IRFZ40
    • Manufacturer No：
      IRFZ40
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFZ40
    • SKU：
      218803
    • Description：
      MOSFET N-CH 60V 50A TO220AB

    User Guide

    User Guide

    IRFZ40 Details

    MOSFET N-CH 60V 50A TO220AB

    IRFZ40 Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Terminations: 3
    • Pin Count: 3
    • JESD-609 Code: e0
    • DS Breakdown Voltage-Min: 60V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Terminal Finish: TIN LEAD
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Package / Case: TO-220-3
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Rise Time: 25 ns
    • Pulsed Drain Current-Max (IDM): 200A
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Length: 10.41mm
    • Current - Continuous Drain (Id) @ 25°C: 50A Tc
    • Height: 9.01mm
    • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
    • Power Dissipation: 126W
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • RoHS Status: Non-RoHS Compliant
    • Packaging: Tube
    • Number of Pins: 3
    • Pbfree Code: no
    • Drain to Source Voltage (Vdss): 60V
    • Published: 2011
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain Current-Max (Abs) (ID): 50A
    • Width: 4.7mm
    • Subcategory: FET General Purpose Power
    • Continuous Drain Current (ID): 35A
    • Turn On Delay Time: 15 ns
    • Turn-Off Delay Time: 35 ns
    • Fall Time (Typ): 12 ns
    • Weight: 6.000006g
    • Power Dissipation-Max: 150W Tc
    • Drain-source On Resistance-Max: 0.028Ohm
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
    • Rds On (Max) @ Id, Vgs: 28m Ω @ 31A, 10V
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