Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:106982
- Qty Unit Price price
- 1 $257.031 $257.031
- 10 $254.486 $2544.86
- 100 $251.966 $25196.6
- 1000 $249.471 $249471
- 10000 $247 $2470000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI4459ADY-T1-GE3
- Manufacturer：Vishay
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4459ADY-T1-GE3
- SKU：250650
- Description：Single P-Channel 30 V 0.005 Ohm Surface Mount Power Mosfet - SOIC-8
User Guide
User Guide
SI4459ADY-T1-GE3 Details
Single P-Channel 30 V 0.005 Ohm Surface Mount Power Mosfet - SOIC-8
SI4459ADY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- REACH SVHC: Unknown
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Transistor Application: SWITCHING
- Height: 1.5mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Resistance: 5mOhm
- Turn On Delay Time: 16 ns
- Threshold Voltage: -2.5V
- Turn-Off Delay Time: 80 ns
- Weight: 186.993455mg
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
- Nominal Vgs: -2.5 V
- Rds On (Max) @ Id, Vgs: 5m Ω @ 15A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Published: 2015
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Length: 5mm
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Fall Time (Typ): 20 ns
- Power Dissipation: 3.5W
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Rise Time: 16 ns
- Series: TrenchFET?
- Drain to Source Breakdown Voltage: -30V
- Current - Continuous Drain (Id) @ 25°C: 29A Tc
- Power Dissipation-Max: 3.5W Ta 7.8W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V
- Continuous Drain Current (ID): -29A
Search for similar products
SI4459ADY-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay & SI4459ADY-T1-GE3
Vishay — Manufacturer Introduction
Vishay Intertechnology is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Vishay has grown through acquisitions to include such top names as Dale, Sfernice, Draloric, Sprague, Vitramon, Siliconix, General Semiconductor, BCcomponents, and Beyschlag. Vishay's portfolio of brands represents an unmatched collection of discrete semiconductors and passive components. All of these brands and products are part of one global manufacturer: Vishay.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
