Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:41572
- Qty Unit Price price
- 1 $162.337 $162.337
- 10 $160.729 $1607.29
- 100 $159.137 $15913.7
- 1000 $157.561 $157561
- 10000 $156 $1560000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI7119DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7119DN-T1-GE3
- SKU：253654
- Description：MOSFET P-CH 200V 3.8A 1212-8
User Guide
User Guide
SI7119DN-T1-GE3 Details
MOSFET P-CH 200V 3.8A 1212-8
SI7119DN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- Published: 2013
- Peak Reflow Temperature (Cel): 260
- Drain to Source Voltage (Vdss): 200V
- Time@Peak Reflow Temperature-Max (s): 40
- Pulsed Drain Current-Max (IDM): 5A
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Threshold Voltage: -4V
- Operating Temperature: -50°C~150°C TJ
- Drain to Source Breakdown Voltage: -200V
- Nominal Vgs: -4 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A Tc
- Rds On (Max) @ Id, Vgs: 1.05 Ω @ 1A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Number of Terminations: 5
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- FET Type: P-Channel
- Series: TrenchFET?
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Power Dissipation: 3.7W
- Package / Case: PowerPAK? 1212-8
- JESD-30 Code: S-XDSO-C5
- Power Dissipation-Max: 3.7W Ta 52W Tc
- Continuous Drain Current (ID): -3.8A
- Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 50V
Search for similar products
SI7119DN-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI7119DN-T1-GE3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
