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  • Manufacturer No:
    IRLL110TRPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    262261
  • Description:
    MOSFET N-CH 100V 1.5A SOT223
  • Quantity:
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Inventory:15974
  • Qty Unit Price price
  • 1 $0.94 $0.94
  • 10 $0.93 $9.3
  • 100 $0.92 $92
  • 1000 $0.91 $910
  • 10000 $0.9 $9000

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  • Manufacturer No:
    IRLL110TRPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRLL110TRPBF
  • SKU:
    262261
  • Description:
    MOSFET N-CH 100V 1.5A SOT223

IRLL110TRPBF Details

MOSFET N-CH 100V 1.5A SOT223

IRLL110TRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Number of Pins: 4
  • Factory Lead Time: 8 Weeks
  • Terminal Form: GULL WING
  • Drain to Source Breakdown Voltage: 100V
  • Max Junction Temperature (Tj): 150°C
  • Gate to Source Voltage (Vgs): 10V
  • Power Dissipation: 2W
  • Published: 2017
  • Continuous Drain Current (ID): 1.5A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • JESD-30 Code: R-PDSO-G3
  • Width: 3.7mm
  • Additional Feature: AVALANCHE RATED
  • Turn-Off Delay Time: 16 ns
  • Vgs (Max): ±10V
  • Turn On Delay Time: 9.3 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4V 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Weight: 250.212891mg
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Pin Count: 4
  • Number of Terminations: 3
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • REACH SVHC: Unknown
  • Transistor Element Material: SILICON
  • Threshold Voltage: 2V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Height: 1.8mm
  • Case Connection: DRAIN
  • Length: 6.7mm
  • Package / Case: TO-261-4, TO-261AA
  • Fall Time (Typ): 18 ns
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Rise Time: 47 ns
  • Resistance: 540mOhm
  • Avalanche Energy Rating (Eas): 50 mJ
  • Current - Continuous Drain (Id) @ 25°C: 1.5A Tc
  • Power Dissipation-Max: 2W Ta 3.1W Tc
  • Rds On (Max) @ Id, Vgs: 540m Ω @ 900mA, 5V

Excellent

Based on reviews

Excellent

Based on reviews

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