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  • Manufacturer No:
    IRFS4321PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFS4321PBF
  • SKU:
    2679049
  • Description:
    MOSFET N-CH 150V 83A D2PAK

IRFS4321PBF Details

MOSFET N-CH 150V 83A D2PAK

IRFS4321PBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Threshold Voltage: 5V
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 150V
  • Published: 2007
  • Element Configuration: Single
  • Part Status: Discontinued
  • Technology: MOSFET (Metal Oxide)
  • Resistance: 15mOhm
  • Turn-Off Delay Time: 25 ns
  • Vgs (Max): ±30V
  • Width: 9.65mm
  • Height: 4.826mm
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Nominal Vgs: 5 V
  • Power Dissipation: 330W
  • Continuous Drain Current (ID): 83A
  • Current - Continuous Drain (Id) @ 25°C: 85A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 25V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Packaging: Tube
  • Termination: SMD/SMT
  • Voltage - Rated DC: 150V
  • Dual Supply Voltage: 150V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 30V
  • FET Type: N-Channel
  • Operating Temperature: -55°C~175°C TJ
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Fall Time (Typ): 35 ns
  • Series: HEXFET?
  • Rise Time: 60ns
  • Turn On Delay Time: 18 ns
  • Length: 10.668mm
  • Recovery Time: 130 ns
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Current Rating: 83A
  • Power Dissipation-Max: 350W Tc
  • Rds On (Max) @ Id, Vgs: 15m Ω @ 33A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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