IRFB5615PBFInfineon
    Add to like
    Add to project list
    Inventory:4500
    • Qty Unit Price price
    • 1 $2.125 $2.125
    • 10 $2.103 $21.03
    • 100 $2.082 $208.2
    • 1000 $2.061 $2061
    • 10000 $2.04 $20400

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRFB5615PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFB5615PBF
    • SKU：
      2679355
    • Description：
      MOSFET N-CH 150V 35A TO-220AB

    User Guide

    User Guide

    IRFB5615PBF Details

    MOSFET N-CH 150V 35A TO-220AB

    IRFB5615PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Drain to Source Breakdown Voltage: 150V
    • Published: 2006
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Continuous Drain Current (ID): 35A
    • Width: 4.826mm
    • Recovery Time: 120 ns
    • Length: 10.668mm
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Vgs(th) (Max) @ Id: 5V @ 100μA
    • Power Dissipation: 144W
    • Power Dissipation-Max: 144W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
    • Rds On (Max) @ Id, Vgs: 39m Ω @ 21A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Threshold Voltage: 3V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Transistor Application: AMPLIFIER
    • Height: 9.02mm
    • Nominal Vgs: 3 V
    • Resistance: 39mOhm
    • Turn On Delay Time: 8.6 ns
    • Current - Continuous Drain (Id) @ 25°C: 35A Tc
    • Fall Time (Typ): 13.2 ns
    • Turn-Off Delay Time: 17.1 ns
    • Rise Time: 23.1 ns
    Search for similar products

    IRFB5615PBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRFB5615PBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via