IRF9358TRPBFInfineon
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    Inventory:14540
    • Qty Unit Price price
    • 1 $1.282 $1.282
    • 10 $1.269 $12.69
    • 100 $1.256 $125.6
    • 1000 $1.243 $1243
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    • Manufacturer No：
      IRF9358TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF9358TRPBF
    • SKU：
      2688264
    • Description：
      MOSFET 2P-CH 30V 9.2A 8SOIC

    User Guide

    User Guide

    IRF9358TRPBF Details

    MOSFET 2P-CH 30V 9.2A 8SOIC

    IRF9358TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 8
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2008
    • Length: 5mm
    • Power Dissipation: 2W
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Transistor Application: SWITCHING
    • Height: 1.5mm
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • FET Feature: Logic Level Gate
    • FET Type: 2 P-Channel (Dual)
    • Continuous Drain Current (ID): 9.2A
    • JEDEC-95 Code: MS-012AA
    • Threshold Voltage: -1.8V
    • Pulsed Drain Current-Max (IDM): 73A
    • Vgs(th) (Max) @ Id: 2.4V @ 25μA
    • Turn-Off Delay Time: 146 ns
    • Drain-source On Resistance-Max: 0.0163Ohm
    • Base Part Number: IRF9358PBF
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Factory Lead Time: 12 Weeks
    • REACH SVHC: No SVHC
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Max Power Dissipation: 2W
    • Gate to Source Voltage (Vgs): 20V
    • Width: 4mm
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: Other Transistors
    • Series: HEXFET?
    • Drain to Source Breakdown Voltage: -30V
    • Turn On Delay Time: 5.7 ns
    • Rise Time: 7.2 ns
    • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
    • Fall Time (Typ): 69 ns
    • Avalanche Energy Rating (Eas): 210 mJ
    • Nominal Vgs: -1.8 V
    • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
    • Rds On (Max) @ Id, Vgs: 16.3m Ω @ 9.2A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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