IRF7351TRPBFInfineon
    Add to like
    Add to project list
    Inventory:33665
    • Qty Unit Price price
    • 1 $270.56 $270.56
    • 10 $267.881 $2678.81
    • 100 $265.228 $26522.8
    • 1000 $262.601 $262601
    • 10000 $260 $2600000

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRF7351TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF7351TRPBF
    • SKU：
      2689195
    • Description：
      MOSFET 2N-CH 60V 8A 8-SOIC

    User Guide

    User Guide

    IRF7351TRPBF Details

    MOSFET 2N-CH 60V 8A 8-SOIC

    IRF7351TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 8
    • Terminal Form: GULL WING
    • Drain to Source Breakdown Voltage: 60V
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Power Dissipation: 2W
    • Operating Temperature: -55°C~150°C TJ
    • Drain Current-Max (Abs) (ID): 8A
    • Transistor Application: SWITCHING
    • Subcategory: FET General Purpose Power
    • Width: 3.9878mm
    • Series: HEXFET?
    • FET Type: 2 N-Channel (Dual)
    • Turn On Delay Time: 5.1 ns
    • Rise Time: 5.9 ns
    • Pulsed Drain Current-Max (IDM): 64A
    • Vgs(th) (Max) @ Id: 4V @ 50μA
    • Base Part Number: IRF7351PBF
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Factory Lead Time: 12 Weeks
    • Drain to Source Voltage (Vdss): 60V
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2009
    • Max Power Dissipation: 2W
    • Gate to Source Voltage (Vgs): 20V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Continuous Drain Current (ID): 8A
    • Operating Mode: ENHANCEMENT MODE
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Height: 1.4986mm
    • FET Feature: Logic Level Gate
    • Turn-Off Delay Time: 17 ns
    • Fall Time (Typ): 6.7 ns
    • Length: 4.9784mm
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
    • Rds On (Max) @ Id, Vgs: 17.8m Ω @ 8A, 10V
    Search for similar products

    IRF7351TRPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRF7351TRPBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via